1 aos semiconductor product reliability report AOW20C60 , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOW20C60 . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confir ms that AOW20C60 passes aos quality and reliability requirements. table of contents: i. product description ii. package and die information iii. reliability stress test summary and result iv. reliability evaluation v. appendix : test data i. product description: the AOW20C60 is fa bricated using an advanced high voltage mosfet process t hat is designed to deliver high levels of performance and robustness in popular ac - dc applications. by providing low r ds(on) , ciss and crss along with guaranteed avalanc he capability this parts can be adopted quickly into new an d existing offline power supply designs. details refer to the datasheet. ii. die / package information: AOW20C60 process standard sub - micron 600v n - channel mosfet package type to 2 62 lead frame bare cu die attach soft solder bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1
3 iii. result of reliability stress for AOW20C60 note a: the reliability data presents total of available generic data up to the published date. iv. reliability evaluation fit rate (per billion): 2. 92 mttf = 39075 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size of the selected product ( AOW20C60 ). failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate (fit) = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.83 x 10 9 / [ 2x ( 4x77x168 + 6x77 x 500 +1 2 x 77x 1 000 ) x259 ] = 2. 92 mttf = 10 9 / fit = 3.42 x 10 8 hrs = 39075 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@2 6 0 c - 12 lots 2541 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 6 lot s 847 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 6 lots 847 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, vgs = 10 0% of vgs max 96 hrs 9 lots (note a *) 693 pcs 77 pcs / lot 0 jesd22 - a110 pressure pot 121 c , 29.7psi , rh=100% 96 hrs 1 2 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a104
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